Part Number | EPC8009 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | EPCOS Inc |
Description | TRANS GAN 65V 2.7A BUMPED DIE |
Series | eGaN |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 65V |
Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.45nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 52pF @ 32.5V |
Vgs (Max) | +6V, -4V |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 500mA, 5V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |
Image |
EPC8009
EPC0S
698
0.53
Ic Base Limited
EPC8009
EPC
7926
1.3675
MY Group (Asia) Limited
EPC8009
EPCOS (TDK)
1646
2.205
BD Electronics Ltd
EPC8009
Epcos/TDK
5832
3.0425
Viassion Technology Co., Limited
EPC8009
EPCOS/
1965
3.88
CIS Ltd (CHECK IC SOLUTION LIMITED)