Part Number | EPC8004 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | EPCOS Inc |
Description | TRANS GAN 40V 2.7A BUMPED DIE |
Series | eGaN |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.45nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 52pF @ 20V |
Vgs (Max) | +6V, -4V |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 500mA, 5V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |
Image |
EPC8004
EPC0S
6230
0.16
BD Electronics Ltd
EPC8004
EPC
31271
1.3875
Southern Electronics Tech Limited
EPC8004
EPCOS (TDK)
60000
2.615
Bonase Electronics (HK) Co., Limited
EPC8004
Epcos/TDK
15000
3.8425
MY Group (Asia) Limited
EPC8004
EPCOS/
8699
5.07
Viassion Technology Co., Limited