Part Number | EPC8002 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | EPCOS Inc |
Description | TRANS GAN 65V 2.7A BUMPED DIE |
Series | eGaN |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 65V |
Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 21pF @ 32.5V |
Vgs (Max) | +6V, -4V |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 530 mOhm @ 500mA, 5V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |
Image |
EPC8002
EPC0S
60000
1.35
Bonase Electronics (HK) Co., Limited
EPC8002
EPC
6989
2.1225
Viassion Technology Co., Limited
EPC8002
EPCOS (TDK)
10766
2.895
N&S Electronic Co., Limited
EPC8002
Epcos/TDK
10
3.6675
Add Industry Co.,Limited
EPC8002
EPCOS/
18000
4.44
MY Group (Asia) Limited