Part Number | EPC2038ENGR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | EPCOS Inc |
Description | TRANS GAN 100V 0.5A BUMPED DIE |
Series | eGaN |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Vgs(th) (Max) @ Id | 2.5V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs | 0.044nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 8.4pF @ 50V |
Vgs (Max) | +6V, -4V |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 3.3 Ohm @ 50mA, 5V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |
Image |
EPC2038ENGR
EPC0S
15000
0.65
MY Group (Asia) Limited
EPC2030
EPC
3459
1.5725
Southern Electronics Tech Limited
EPC2032
EPCOS (TDK)
300
2.495
Sino Star Electronics (HK) Co.,Limited
EPC2038
Epcos/TDK
1922
3.4175
Corich International Ltd.
EPC2030ENGRT
EPCOS/
15000
4.34
MY Group (Asia) Limited