Part Number | EPC2037 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | EPCOS Inc |
Description | TRANS GAN 100V 550MOHM BUMPED DI |
Series | eGaN |
Packaging | - |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Vgs(th) (Max) @ Id | 2.5V @ 80µA |
Gate Charge (Qg) (Max) @ Vgs | 0.12nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 14pF @ 50V |
Vgs (Max) | +6V, -4V |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 550 mOhm @ 100mA, 5V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | - |
Package / Case | - |
Image |
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