Part Number | EPC2032ENGRT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | EPCOS Inc |
Description | TRANS GAN 100V 48A BUMPED DIE |
Series | eGaN |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 48A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 11mA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 1530pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 30A, 5V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |
Image |
EPC2032ENGRT
EPC0S
7834
1.07
MY Group (Asia) Limited
EPC2032ENGRT
EPC
6938
1.61
HK TWO L ELECTRONIC LIMITED
EPC2038
EPCOS (TDK)
2754
2.15
Corich International Ltd.
EPC2030ENGRT
Epcos/TDK
8078
2.69
MY Group (Asia) Limited
EPC2036
EPCOS/
8221
3.23
Yingxinyuan INT'L (Group) Limited