Part Number | EPC2029ENGRT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | EPCOS Inc |
Description | TRANS GAN 80V 31A BUMPED DIE |
Series | eGaN |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 31A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 12mA |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 40V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 30A, 5V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |
Image |
EPC2029ENGRT
EPC0S
2436
0.6
MY Group (Asia) Limited
EPC2029ENGRT
EPC
2249
1.605
ONSTAR ELECTRONICS CO., LIMITED
EPC2020
EPCOS (TDK)
267
2.61
MY Group (Asia) Limited
EPC2023ENGR
Epcos/TDK
5793
3.615
TERNARY UNION CO., LIMITED
EPC2020
EPCOS/
4710
4.62
Lungke Electronics Technology Co., Limited