Part Number | EPC2023ENGR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | EPCOS Inc |
Description | TRANS GAN 30V 60A BUMPED DIE |
Series | eGaN |
Packaging | |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 20mA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 1.3 mOhm @ 40A, 5V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |
Image |
EPC2023ENGR
EPC0S
3616
0.08
TERNARY UNION CO., LIMITED
EPC2020
EPC
15000
0.99
MY Group (Asia) Limited
EPC2020
EPCOS (TDK)
3000
1.9
Lungke Electronics Technology Co., Limited
EPC2029ENGRT
Epcos/TDK
1000
2.81
ONSTAR ELECTRONICS CO., LIMITED
EPC2029
EPCOS/
210
3.72
Bonase Electronics (HK) Co., Limited