Part Number | EPC2022 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | EPCOS Inc |
Description | TRANS GAN 100V 3MOHM BUMPED DIE |
Series | eGaN |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Vgs(th) (Max) @ Id | 2.5V @ 12mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 50V |
Vgs (Max) | +6V, -4V |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 25A, 5V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |
Image |
EPC2022
EPC0S
1400
0.64
MY Group (Asia) Limited
EPC2022
EPC
11122
1.575
BD Electronics Ltd
EPC2022
EPCOS (TDK)
10804
2.51
Southern Electronics Tech Limited
EPC2022
Epcos/TDK
9340
3.445
Viassion Technology Co., Limited
EPC2022
EPCOS/
3500
4.38
Lungke Electronics Technology Co., Limited