Part Number | EPC2020 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | EPCOS Inc |
Description | TRANS GAN 60V 90A BUMPED DIE |
Series | eGaN |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 90A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Vgs(th) (Max) @ Id | 2.5V @ 16mA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 1780pF @ 30V |
Vgs (Max) | +6V, -4V |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 2.2 mOhm @ 31A, 5V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |
Image |
EPC2020
EPC0S
15000
0.24
MY Group (Asia) Limited
EPC2020
EPC
3000
1.375
Lungke Electronics Technology Co., Limited
EPC2020ENG
EPCOS (TDK)
14000
2.51
MY Group (Asia) Limited
EPC2029ENGRT
Epcos/TDK
1000
3.645
ONSTAR ELECTRONICS CO., LIMITED
EPC2021
EPCOS/
2000
4.78
Lungke Electronics Technology Co., Limited