Part Number | EPC2016 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | EPCOS Inc |
Description | TRANS GAN 100V 11A BUMPED DIE |
Series | eGaN |
Packaging | |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 11A, 5V |
Operating Temperature | -40°C ~ 125°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |
Image |
EPC2016
EPC0S
1000
1.44
MY Group (Asia) Limited
EPC2016
EPC
400
2.435
Dopoint Hi-Tech Limited
EPC2016C
EPCOS (TDK)
57
3.43
Ande Electronics Co., Limited
EPC2010C
Epcos/TDK
16880
4.425
Digchip Technology Co.,Limited
EPC2010
EPCOS/
15000
5.42
MY Group (Asia) Limited