Part Number | EPC2015C |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | EPCOS Inc |
Description | TRANS GAN 40V 33A BUMPED DIE |
Series | eGaN |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 53A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Vgs(th) (Max) @ Id | 2.5V @ 9mA |
Gate Charge (Qg) (Max) @ Vgs | 8.7nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 980pF @ 20V |
Vgs (Max) | +6V, -4V |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 33A, 5V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |
Image |
EPC2015C
EPC0S
100
1.71
RX ELECTRONICS LIMITED
EPC2015C
EPC
30000
2.655
QUARKTWIN TECHNOLOGY LIMITED
EPC2015C
EPCOS (TDK)
8834
3.6
BD Electronics Ltd
EPC2015C
Epcos/TDK
12500
4.545
CIS Ltd (CHECK IC SOLUTION LIMITED)
EPC2015C
EPCOS/
10657
5.49
Viassion Technology Co., Limited