Part Number | EPC2015 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | EPCOS Inc |
Description | TRANS GAN 40V 33A BUMPED DIE |
Series | eGaN |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 33A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Vgs(th) (Max) @ Id | 2.5V @ 9mA |
Gate Charge (Qg) (Max) @ Vgs | 11.6nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 20V |
Vgs (Max) | +6V, -5V |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 33A, 5V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die Outline (11-Solder Bar) |
Package / Case | Die |
Image |
EPC2015
EPC0S
6523
0.48
MY Group (Asia) Limited
EPC2015
EPC
4684
2.0175
CIS Ltd (CHECK IC SOLUTION LIMITED)
EPC2015
EPCOS (TDK)
8279
3.555
HK TWO L ELECTRONIC LIMITED
EPC2015
Epcos/TDK
5118
5.0925
Yingxinyuan INT'L (Group) Limited
EPC2015
EPCOS/
5962
6.63
Ande Electronics Co., Limited